issue 1 - may 2006 1 www.zetex.com ? zetex semiconductors plc 2006 ZXMN6A08G 60v sot223 n-channel enhancement mode mosfet summary description this new generation trench mosfet from zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for hi gh efficiency power management applications. features ? low on-resistance fast switching speed low threshold low gate drive sot223 package applications dc-dc converters power management functions disconnect switches motor control ordering information device marking zxmn 6a08 v (br)dss r ds(on) ( ) i d (a) 60 0.080 @ v gs = 10v 5.3 0.150 @ v gs = 4.5v 2.8 device reel size (inches) tape width (mm) quantity per reel ZXMN6A08Gta 7 12 1,000 ZXMN6A08Gtc 13 12 4,000 d s g d pinout - top view s d g
ZXMN6A08G issue 1 - may 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) for a device surface mounted on fr4 pcb measured at t 10 sec. (c) repetitive rating - 25mm x 25mm fr4 pcb, d=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. parameter symbol limit unit drain-source voltage v dss 60 v gate-source voltage v gs 20 v continuous drain current @ v gs = 10v; t amb = 25c (b) i d 5.3 a @ v gs = 10v; t amb = 70c (b) 4.2 @ v gs = 10v; t amb = 25c (a) 3.8 pulsed drain current (c) i dm 20 a continuous source current (body diode) (b) i s 2.1 a pulsed source current (body diode) (c) i sm 20 a power dissipation at t amb = 25c (a) p d 2w linear derating factor 16 mw/c power dissipation at t amb = 25c (b) p d 3.9 w linear derating factor 31 mw/c operating and storage temperature range t j , t stg -55 to +150 c thermal resistance parameter symbol limit unit junction to ambient (a) r ja 62.5 c/w junction to ambient (b) r ja 32 c/w
ZXMN6A08G issue 1 - may 2006 3 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXMN6A08G issue 1 - may 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 60 v i d = 250 a, v gs =0v zero gate voltage drain current i dss 0.5 av ds = 60v, v gs =0v gate-body leakage i gss 100 na v gs =20v, v ds =0v gate-source threshold voltage v gs(th) 1vi d = 250 a, v ds =v gs static drain-source on-state resistance (*) r ds(on) 0.080 v gs = 10v, i d = 4.8a 0.150 v gs = 4.5v, i d = 4.2a forward transconductance (*) (?) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. g fs 6.6 s v ds = 15v, i d = 4.8a dynamic (?) input capacitance c iss 459 pf v ds = 40v, v gs =0v f=1mhz output capacitance c oss 44.2 pf reverse transfer capacitance c rss 24.1 pf switching (?) (?) (?) switching characteristics are independ ent of operating junction temperature. (?) for design aid only, not subject to production testing. turn-on delay time t d(on) 2.6 ns v dd = 30v, i d = 1.5a r g ? 6.0 , v gs = 10v rise time t r 2.1 ns turn-off delay time t d(off) 12.3 ns fall time t f 4.6 ns gate charge q g 4.0 nc v ds = 30v, v gs = 5v i d = 1.4a total gate charge q g 5.8 nc v ds = 30v, v gs = 10v i d = 1.4a gate-source charge q gs 1.4 nc gate drain charge q gd 1.9 nc source-drain diode diode forward voltage (*) v sd 0.88 1.2 v t j =25c, i s = 4a, v gs =0v reverse recovery time (?) t rr 19.2 ns tj=25c, i s = 1.4a, di/dt=100a/ s reverse recovery charge (?) q rr 30.3 nc
ZXMN6A08G issue 1 - may 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXMN6A08G issue 1 - may 2006 6 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics current regulator charge gate charge test circuit switching time test circuit basic gate charge waveform switching time waveforms d.u.t 50k 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t d(off) v ds v cc r d r g v ds i d i g
ZXMN6A08G issue 1 - may 2006 7 www.zetex.com ? zetex semiconductors plc 2006 intentionally left blank
ZXMN6A08G issue 1 - may 2006 8 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot223 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim millimeters inches dim millimeters inches min max min max min max min max a - 1.80 - 0.071 e 2.30 bsc 0.0905 bsc a1 0.02 0.10 0.0008 0.004 e1 4.60 bsc 0.181 bsc b 0.66 0.84 0.026 0.033 e 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 e1 3.30 3.70 0.130 0.146 c 0.23 0.33 0.009 0.013 l 0.90 - 0.355 - d 6.30 6.70 0.248 0.264 - - - - -
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